Analysis of HBT Behavior After Strong Electrothermal Stress
نویسندگان
چکیده
245 Abstract—We present two-dimensional simulations of onefinger power InGaP/GaAs Heterojunction Bipolar Transistors (HBTs) before and after both electrical and thermal stress aging. It is well known that GaAs-HBTs with InGaP emitter material can be improved with respect to reliability if the emitter material covers the complete p-doped base layer forming outside the active emitter the so-called InGaP ledge. We analyze the influence of the ledge thickness and of of the surface charges on the device performance and its impact on reliability. The possibility to explain device degradation mechanisms by means of numerical simulation is of high practical importance.
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